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    PRODUCT

          제품소개   >  GaN 웨이퍼     

    Galium Nitride Wafer
    GaN wafer  
    질화갈륨 웨이퍼 

    특징

       무취 · 무독성

       고순도 (99.999% 이상)

       매끄럽고 기공 없는 표면

       화학적 불활성

        상온에서 산 · 알칼리 · 염 · 유기 시약 등에 불활성

        용융 금속, 반도체 및 기타 화합물에 불활성

    장점

       높은 전기 저항성 및 전기 절연성

       고온 적합성

        고온에서 산 · 알칼리에 반응성 없음

        내산화성 우수 (1000℃ 이하)

        내열 충격성 우수

        3000℃ 이상에서 승화점 없이 붕소(B)와 질소(N)로 분해

    규격

    일반 사양

    Density

    Tensile Strength

    Bending Strength

    Compression Strength

    1.95 ~ 2.20 g/cm³

    112 MPa

    173 MPa

    154 MPa

    Young's Modulus

    Thermal Conductivity

    Specific Heat

    Resistivity

    18 Gpa

    "a" 60  "c" 2  W/mºC

    0.90 (RT)  J/gºC

    2 x 10¹⁵  Ω·cm

    Dielectric Strength

    Dielectric Constant

    Metal Impurity Content

    2 x 10¹⁵  D.C. volts/mm

    "c" 3.07

    < 10 ppm

     GaN Substrate

    Instruction

    No buffer layer is required. 
    GaN Epitaxial Wafers are the ideal substrates for GaN homoepitaxial growth and device manufacturing.1

    Feature

    High purity (99.999%)
    Low outgassing in high temperature
    Uniform thickness, Good consistency in heating
    Excellent thermal conductivity and shock resistance
    Easy cleaning and Reusability
    Inert, no reaction with acid and alkali

     PBN Boat

    Instruction

    Before the compound semiconductor single crystal growth, it is usually synthesis the compound semiconductor polycrystalline material first. 
    PBN Boat is ideal vessel for polycrystalline synthesis. 

    Feature

    High Purity (99.999%) 
    No wetting with melt metal
    Thermal conductivity controllable, improve the rate of yield
    Excellent thermal shock resistance
    Easy cleaning and Reusability
    Inert, no reaction with acid and alkali

    Specification

    Type -1

    Type -2

    Type -3

    Type -4

    Length

    2" ~ 15"

    6" ~ 20"

    6" ~ 20"

    6" ~ 20"

    Height

    0.5" ~ 1"

    1"

    1.5"

    2"

    Thickness

    0.035" ~ 0.08"

    0.035" ~ 0.08"

    0.035" ~ 0.08"

    0.035" ~ 0.08"

     · This form is for typical sizes, other size is customizable. 

    관련제품

    관련제품

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    1. · 무독·무취
    2. · 고순도(99.999%이상)
    3. · 매끄럽고 기공없는 표면
    4. · 우수한 전기 저항성 및 전기 절연성
    5. · 화학적 불활성
    6.      상온 - 산·알칼리·염·유기 시약 등에 불활성
    7.      용융 금속, 반도체 및 기타 화합물과 불활성
    8. · 고온 적합성
    9.      고온 - 산·알칼리에 불활성
    10.      내산화성 우수(1000℃ 이하)
    11.      내열충격성 우수
    12.      승화점 없이 3000℃ 이상에서 붕소(B)와 질소(N)로 분해
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    PBN Crucibles for OLED(Organic Light Emitting Diode)
    OLED is a kind of new developing advanced display technology. 
    OLED Crucible is applied as main vessel of  OLED effusion cell.

    PBN Crucibles for OLED(Organic Light Emitting Diode)

     PBN Crucibles for VGF ( Vertical Gradient Freeze )

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     PBN Crucibles for LEC

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     PBN Boat

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     PBN Boat on Graphite

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     PBN Crucibles for LEC

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     PBN – Heater components

     PBN Plate

    - PBN Rods and Bars
    - PBN Tubes
    - PBN coatings on Graphite and Other substrates
    - PBN – Heater components

    {"google":["Questrial","Montserrat","Lexend Deca","Roboto","Poppins","Didact Gothic","agGridMaterial"],"custom":["Noto Sans KR","Jeju Gothic","Nanum Square","Nanum Barun Gothic"]}{"google":["Questrial","Montserrat","Lexend Deca","Alegreya"],"custom":["Noto Sans KR","Jeju Gothic"]}
    {"google":[],"custom":["Noto Sans KR"]}