Galium Nitride Wafer
GaN wafer 질화갈륨 웨이퍼
▸ 규격: 2inch
▸ 규격: 4inch
▸ 규격: 6inch
▸ 구분: GaN wafer(substrate)
▸ 구분: GaN Epi wafer
특징
무취 · 무독성
고순도 (99.999% 이상)
매끄럽고 기공 없는 표면
화학적 불활성
상온에서 산 · 알칼리 · 염 · 유기 시약 등에 불활성
용융 금속, 반도체 및 기타 화합물에 불활성
장점
높은 전기 저항성 및 전기 절연성
고온 적합성
고온에서 산 · 알칼리에 반응성 없음
내산화성 우수 (1000℃ 이하)
내열 충격성 우수
3000℃ 이상에서 승화점 없이 붕소(B)와 질소(N)로 분해
규격
일반 사양
Density
Tensile Strength
Bending Strength
Compression Strength
1.95 ~ 2.20 g/cm³
112 MPa
173 MPa
154 MPa
Young's Modulus
Thermal Conductivity
Specific Heat
Resistivity
18 Gpa
"a" 60 "c" 2 W/mºC
0.90 (RT) J/gºC
2 x 10¹⁵ Ω·cm
Dielectric Strength
Dielectric Constant
Metal Impurity Content
2 x 10¹⁵ D.C. volts/mm
"c" 3.07
< 10 ppm
GaN Substrate
Instruction
No buffer layer is required.
GaN Epitaxial Wafers are the ideal substrates for GaN homoepitaxial growth and device manufacturing.1
Feature
High purity (99.999%)
Low outgassing in high temperature
Uniform thickness, Good consistency in heating
Excellent thermal conductivity and shock resistance
Easy cleaning and Reusability
Inert, no reaction with acid and alkali
PBN Boat
Instruction
Before the compound semiconductor single crystal growth, it is usually synthesis the compound semiconductor polycrystalline material first.
PBN Boat is ideal vessel for polycrystalline synthesis.
Feature
High Purity (99.999%)
No wetting with melt metal
Thermal conductivity controllable, improve the rate of yield
Excellent thermal shock resistance
Easy cleaning and Reusability
Inert, no reaction with acid and alkali
Specification
Type -1
Type -2
Type -3
Type -4
Length
2" ~ 15"
6" ~ 20"
6" ~ 20"
6" ~ 20"
Height
0.5" ~ 1"
1"
1.5"
2"
Thickness
0.035" ~ 0.08"
0.035" ~ 0.08"
0.035" ~ 0.08"
0.035" ~ 0.08"
· This form is for typical sizes, other size is customizable.
관련제품
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